供应商名称 | 电话 | 备注 |
---|---|---|
得捷电子(上海)有限公司 | 400 920 1199 |
产品介绍
NXP PBSS5330X 晶体管
NXP PBSS5330X PNP Low Saturation Bipolar Transistor, 3 A, 30 V, 4-Pin UPAK
NXP
Low Saturation Voltage PNP Transistors, NXP A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications. Bipolar Transistors, NXP Semiconductors ; Transistor Type PNP; Maximum DC Collector Current 3 A; Maximum Collector Emitter Voltage 30 V; Package Type UPAK; Mounting Type Surface Mount; Maximum Power Dissipation 1.6 W; Minimum DC Current Gain 100; Maximum Collector Base Voltage 30 V; Maximum Emitter Base Voltage 6 V; Maximum Operating Frequency 100 MHz; Pin Count 4; Number of Elements per Chip 1; Minimum Operating Temperature -65 °C; Maximum Operating Temperature +150 °C; Maximum Base Emitter Saturation Voltage 1.2 V; Length 4.6mm; Dimensions 1.6 x 4.6 x 2.6mm; Width 2.6mm; Maximum Collector Emitter Saturation Voltage 0.32 V; Height 1.6mm;
Bipolar Transistors