供应商名称 | 电话 | 备注 |
---|---|---|
得捷电子(上海)有限公司 | 400 920 1199 |
产品介绍
NXP PBSS4350SS 晶体管
NXP PBSS4350SS Dual NPN Low Saturation Bipolar Transistor, 2.7 A, 50 V, 8-Pin SOT-96
NXP
Low Saturation Voltage NPN Transistors, NXP A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications. Bipolar Transistors, NXP Semiconductors ; Transistor Type NPN; Maximum DC Collector Current 2.7 A; Maximum Collector Emitter Voltage 50 V; Package Type SOT-96; Mounting Type Surface Mount; Maximum Power Dissipation 2 W; Minimum DC Current Gain 300; Maximum Collector Base Voltage 50 V; Maximum Emitter Base Voltage 5 V; Maximum Operating Frequency 1 MHz; Pin Count 8; Number of Elements per Chip 2; Length 5mm; Maximum Base Emitter Saturation Voltage 1.2 V; Minimum Operating Temperature -65 °C; Maximum Operating Temperature +150 °C; Maximum Collector Emitter Saturation Voltage 340 mV; Height 1.75mm; Width 4mm; Dimensions 5 x 4 x 1.75mm;
Bipolar Transistors