供应商名称 | 电话 | 备注 |
---|---|---|
得捷电子(上海)有限公司 | 400 920 1199 |
产品介绍
NXP PBHV8215Z 晶体管
NXP PBHV8215Z NPN Low Saturation Bipolar Transistor, 2 A, 150 V SOT-223
NXP
Low Saturation Voltage NPN Transistors, NXP A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications. Bipolar Transistors, NXP Semiconductors ; Transistor Type NPN; Maximum DC Collector Current 2 A; Maximum Collector Emitter Voltage 150 V; Package Type SOT-223; Mounting Type Surface Mount; Maximum Power Dissipation 1.45 W; Minimum DC Current Gain 100; Maximum Collector Base Voltage 350 V; Maximum Emitter Base Voltage 6 V; Maximum Operating Frequency 100 MHz; Pin Count 3 + Tab; Number of Elements per Chip 1; Height 1.8mm; Maximum Operating Temperature +150 °C; Minimum Operating Temperature -55 °C; Width 3.7mm; Maximum Base Emitter Saturation Voltage 1.2 V; Maximum Collector Emitter Saturation Voltage 280 mV; Length 6.7mm; Dimensions 6.7 x 3.7 x 1.8mm;
Bipolar Transistors