供应商名称 | 电话 | 备注 |
---|---|---|
得捷电子(上海)有限公司 | 400 920 1199 |
产品介绍
NXP PBSS4041NZ 晶体管
NXP PBSS4041NZ NPN Low Saturation Bipolar Transistor, 7 A, 60 V SOT-223
NXP
Low Saturation Voltage NPN Transistors, NXP A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications. Bipolar Transistors, NXP Semiconductors ; Transistor Type NPN; Maximum DC Collector Current 7 A; Maximum Collector Emitter Voltage 60 V; Package Type SOT-223; Mounting Type Surface Mount; Maximum Power Dissipation 2600 mW; Minimum DC Current Gain 300; Maximum Collector Base Voltage 60 V; Maximum Emitter Base Voltage 5 V; Maximum Operating Frequency 100 MHz; Pin Count 3 + Tab; Number of Elements per Chip 1; Length 6.7mm; Width 3.7mm; Maximum Base Emitter Saturation Voltage 1.05 V; Maximum Collector Emitter Saturation Voltage 195 mV; Height 1.8mm; Maximum Operating Temperature +150 °C; Dimensions 6.7 x 3.7 x 1.8mm; Minimum Operating Temperature -55 °C;
Bipolar Transistors