| 供应商名称 | 电话 | 备注 |
|---|---|---|
| 得捷电子（上海）有限公司 | 400 920 1199 |
产品介绍
NXP PBRP123YT 晶体管
NXP PBRP123YT PNP Low Saturation Bipolar Transistor, 0.6 A, 40 V, 3-Pin SOT-23
NXP
Low Saturation Voltage PNP Transistors, NXP A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications. Bipolar Transistors, NXP Semiconductors ; Transistor Type PNP; Maximum DC Collector Current 0.6 A; Maximum Collector Emitter Voltage 40 V; Package Type SOT-23; Mounting Type Surface Mount; Maximum Power Dissipation 570 mW; Minimum DC Current Gain 230; Maximum Collector Base Voltage -40 V; Maximum Emitter Base Voltage -5 V; Maximum Operating Frequency 1 MHz; Pin Count 3; Number of Elements per Chip 1; Minimum Operating Temperature -55 °C; Length 3mm; Dimensions 3 x 1.4 x 1.1mm; Width 1.4mm; Maximum Operating Temperature +150 °C; Height 1.1mm; Maximum Collector Emitter Saturation Voltage -45 mV;
Bipolar Transistors
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