供应商名称 | 电话 | 备注 |
---|---|---|
得捷电子(上海)有限公司 | 400 920 1199 |
产品介绍
NXP PBHV8118T 晶体管
NXP PBHV8118T NPN Low Saturation Bipolar Transistor, 1 A, 180 V, 3-Pin SOT-23
NXP
Low Saturation Voltage NPN Transistors, NXP A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications. Bipolar Transistors, NXP Semiconductors ; Transistor Type NPN; Maximum DC Collector Current 1 A; Maximum Collector Emitter Voltage 180 V; Package Type SOT-23; Mounting Type Surface Mount; Maximum Power Dissipation 300 mW; Minimum DC Current Gain 100; Maximum Collector Base Voltage 400 V; Maximum Emitter Base Voltage 6 V; Maximum Operating Frequency 100 MHz; Pin Count 3; Number of Elements per Chip 1; Width 1.4mm; Minimum Operating Temperature -55 °C; Maximum Collector Emitter Saturation Voltage 60 mV; Height 1.1mm; Maximum Operating Temperature +150 °C; Dimensions 3 x 1.4 x 1.1mm; Length 3mm; Maximum Base Emitter Saturation Voltage 1.2 V;
Bipolar Transistors