| 供应商名称 | 电话 | 备注 |
|---|---|---|
| 得捷电子（上海）有限公司 | 400 920 1199 |
产品介绍
NXP PBSS5580PA 晶体管
NXP PBSS5580PA PNP Low Saturation Bipolar Transistor, 4 A, 80 V, 3-Pin HUSON
NXP
Low Saturation Voltage PNP Transistors, NXP A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications. Bipolar Transistors, NXP Semiconductors ; Transistor Type PNP; Maximum DC Collector Current 4 A; Maximum Collector Emitter Voltage 80 V; Package Type HUSON; Mounting Type Surface Mount; Maximum Power Dissipation 500 mW; Minimum DC Current Gain 70; Maximum Collector Base Voltage -80 V; Maximum Emitter Base Voltage -7 V; Maximum Operating Frequency 100 MHz; Pin Count 3; Number of Elements per Chip 1; Minimum Operating Temperature -55 °C; Maximum Collector Emitter Saturation Voltage -60 mV; Width 2.1mm; Height 0.65mm; Length 2.1mm; Dimensions 2.1 x 2.1 x 0.65mm; Maximum Operating Temperature +150 °C; Maximum Base Emitter Saturation Voltage -0.9 V;
Bipolar Transistors
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