ON Semiconductor MMT10B350T3G 晶闸管浪涌保护器件-产品快照
- 品牌:
- ON Semiconductor
- 型号:
- MMT10B350T3G
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产品介绍
ON Semiconductor MMT10B350T3G 晶闸管浪涌保护器件
MMT10B350T3G
ON Semiconductor
Thyristor Surge Protection Devices 300V 2-Pin SMB T/R
Specifications EU RoHS Compliant Direction Type Bi-Directional Repetitive Peak Reverse Voltage (V) 300 Repetitive Peak Forward Blocking Voltage (V) 300 Maximum Holding Current (mA) 300(Typ) Peak On-State Voltage (V) 5@1A Repetitive Peak Off-State Current (mA) 0.005 Maximum Breakover Current (mA) 475(Typ) Maximum Breakover Voltage (V) 400 Maximum Rate of Rise of On-State Current (A/us) 100 Maximum Peak Pulse Current (A) 500 Maximum Rate of Rise of Off-State Voltage (V/us) 2000(Min) Minimum Operating Temperature (°C) -40 Maximum Operating Temperature (°C) 125 Packaging Tape and Reel Mounting Surface Mount Package Height (mm) 2.41(Max) Package Length (mm) 4.57(Max) Package Width (mm) 3.81(Max) PCB changed 2 Standard Package Name DO-214-AA Supplier Package SMB Pin Count 2 Lead Shape J-Lead
Thyristor Surge Protection Devices
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