Fairchild仙童 FQP50N06 晶体管-产品快照
- 品牌:
- Fairchild
- 型号:
- FQP50N06
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产品介绍
Fairchild仙童 FQP50N06 晶体管
FAIRCHILD SEMICONDUCTOR FQP50N06 MOSFET Transistor, N Channel, 50 A, 60 V, 22 mohm, 10 V, 4 V
FAIRCHILD SEMICONDUCTOR
The FQP50N06 is a 60V N-channel QFET® enhancement mode Power MOSFET is produced using Fairchild's proprietary, planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high efficient switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology. This device is well suited for low voltage applications such as DC/DC converters, high efficiency switching for portable and battery operated products. This product is general usage and suitable for many different applications. Low gate charge 100% Avalanche tested Improved dv/dt capability Switching loss improvements Lower conduction loss 175°C Maximum junction temperature rating Transistor Polarity: N Channel Continuous Drain Current Id: 50A Drain Source Voltage Vds: 60V On Resistance Rds(on): 0.022ohm Rds(on) Test Voltage Vgs: 10V Threshold Voltage Vgs: 4V Power Dissipation Pd: 120W Transistor Case Style: TO-220 No. of Pins: 3Pins Operating Temperature Max: 175°C Product Range: - Automotive Qualifications Standard: - MSL: - Operating Temperature Min: -55 SVHC: No SVHC (15-Jun-2015) Find similar products grouped by common attribute
Semiconductors - Discretes Transistors MOSFET Transistors MOSFET Transistors -
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