DIODES INC. DMG6602SVT 晶体管-产品快照
- 品牌:
- DIODES INC.
- 型号:
- DMG6602SVT
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| 供应商名称 | 电话 | 备注 |
|---|---|---|
| 暂无展示，可咨询在线客服 | 400-811-6961 |
 微信咨询，as10@gchane.com , QQ3350168184
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产品介绍
DIODES INC. DMG6602SVT 晶体管
DIODES INC. DMG6602SVT Dual MOSFET, N and P Channel, 3.4 A, 30 V, 0.038 ohm, 10 V, 1 V
DIODES INC.
The DMG6602SVT from Diode Inc is a surface mount complementary pair enhancement mode MOSFET in TSOT-26 package. This MOSFET features low input capacitance, fast switching speed and low input/output leakage, designed to minimize the onstate resistance and maintain superior switching performance, making it ideal for high efficiency power management applications and backlighting. Automotive grade AEC-Q101 qualified UL recognized Drain to source voltage (Vds) of 30V Gate to source voltage (Vgs) of ±20V Continuous drain current of 3.4A Power dissipation (Pd) of 1.27W Operating temperature range from -55°C to 150°C Low on state resistance of 38mohm at Vgs of 10V Transistor Polarity: N and P Channel Continuous Drain Current Id: 3.4A Drain Source Voltage Vds: 30V On Resistance Rds(on): 0.038ohm Rds(on) Test Voltage Vgs: 10V Threshold Voltage Vgs: 1V Power Dissipation Pd: 1.12W Transistor Case Style: TSOT-26 No. of Pins: 6Pins Operating Temperature Max: 150°C Product Range: - Automotive Qualifications Standard: - MSL: - Operating Temperature Min: -55 °C SVHC: To Be Advised Find similar products grouped by common attribute
Semiconductors - Discretes Transistors MOSFET Transistors Dual MOSFET Transistors
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