Fairchild仙童 FDN304P 晶体管-产品快照
- 品牌:
- Fairchild
- 型号:
- FDN304P
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|---|---|---|
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产品介绍
Fairchild仙童 FDN304P 晶体管
FAIRCHILD SEMICONDUCTOR FDN304P MOSFET Transistor, P Channel, -2.4 A, -20 V, 52 mohm, -4.5 V, -800 mV
FAIRCHILD SEMICONDUCTOR
The FDN304P from Fairchild is P channel 1.8V specified PowerTrench MOSFET in superSOT-3 package. This product features fast switching speed, high performance trench technology for extremely low Rds(on), thus suite for applications such as battery management, load switch and battery power management. Drain to source voltage (Vds) of -20V Gate to source voltage of ±8V Low on state resistance of 65mohm at Vgs -1.8V Continuous drain current of -2.4A Maximum power dissipation of 500mW Operating junction temperature range from -55°C to 150°C Transistor Polarity: P Channel Continuous Drain Current Id: -2.4A Drain Source Voltage Vds: -20V On Resistance Rds(on): 0.052ohm Rds(on) Test Voltage Vgs: -4.5V Threshold Voltage Vgs: -800mV Power Dissipation Pd: 500mW Transistor Case Style: SuperSOT No. of Pins: 3Pins Operating Temperature Max: 150°C Product Range: - Automotive Qualifications Standard: - MSL: MSL 1 - Unlimited Operating Temperature Min: -55 °C SVHC: No SVHC (15-Jun-2015) Find similar products grouped by common attribute
Semiconductors - Discretes Transistors MOSFET Transistors MOSFET Transistors -
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