Renesas瑞萨 R1LV0216BSB-5SI#B0-产品快照
- 品牌:
- Renesas
- 型号:
- R1LV0216BSB-5SI#B0
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|---|---|---|
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产品介绍
Renesas瑞萨 R1LV0216BSB-5SI#B0
Renesas Electronics R1LV0216BSB-5SI#B0 SRAM Memory Chip, 2Mbit, 2.7 → 3.6 V, 55ns 44-Pin TSOP
Renesas Electronics
Low Power SRAM, Renesas Electronics The R1LV Series of advanced low voltage static RAMs is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. Single 2.7V to 3.6V power supplySmall stand-by currentNo clocks, No refresh requiredAll inputs and outputs are TTL compatibleThree-state outputs: OR-tie Capability Static RAM SRAM (Static Random Access Memory) ; Memory Size 2Mbit; Organisation 128K x 16 bit; Number of Words 128K; Number of Bits per Word 16bit; Maximum Random Access Time 55ns; Low Power Yes; Timing Type Asynchronous; Mounting Type Surface Mount; Package Type TSOP; Pin Count 44; Maximum Operating Supply Voltage 3.6 V; Length 18.41mm; Minimum Operating Temperature -40 °C; Maximum Operating Temperature +85 °C; Minimum Operating Supply Voltage 2.7 V; Width 11.76mm;
SRAM Memory Chips
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