Vishay威世 VB30100C-E3/4W 二级管-产品快照
- 品牌:
- Vishay
- 型号:
- VB30100C-E3/4W
* 所有产品信息均源于第三方公开数据或用户上传，工业链仅整合供参考，真实价格货期请联系供应商确认.
| 供应商名称 | 电话 | 备注 |
|---|---|---|
| 欧时电子元件（上海）有限公司 | ||
| TME | ||
| 富昌电子（上海）有限公司 | 400 821 6206 |
产品介绍
Vishay威世 VB30100C-E3/4W 二级管
Vishay VB30100C-E3/4W, Dual SMT Schottky Diode, Common Cathode, 100V 30A, 2+Tab-Pin TO-263AB
Vishay
TMBS - Trench MOS Barrier Schottky Rectifiers, 30A to 80A, Vishay Semiconductor The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds. Patented Trench StructureImproved efficiency in AC/DC Switched mode-power supplies and DC/DC convertersHigh power density and low forward voltage Features Schottky Rectifiers, Vishay Semiconductor ; Maximum Continuous Forward Current 30A; Diode Configuration Common Cathode; Number of Elements per Chip 2; Peak Reverse Repetitive Voltage 100V; Mounting Type Surface Mount; Package Type TO-263AB; Diode Type Schottky; Peak Forward Voltage 800mV; Pin Count 2+Tab; Length 10.45mm; Width 9.14mm; Height 4.83mm; Peak Reverse Current 35mA; Maximum Operating Temperature +150 °C; Minimum Operating Temperature -40 °C; Dimensions 10.45 x 9.14 x 4.83mm;
Rectifier & Schottky Diodes
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