Infineon IDH03SG60C 二级管-产品快照
- 品牌:
- Infineon
- 型号:
- IDH03SG60C
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| 供应商名称 | 电话 | 备注 |
|---|---|---|
| 暂无展示，可咨询在线客服 | 400-811-6961 |
 微信咨询，cs10@gchane.com , QQ1653501665
|
产品介绍
Infineon IDH03SG60C 二级管
NewInfineon IDH03SG60C, Schottky Switching Diode, 3A, 2+Tab-Pin TO-220
Infineon
thinQ!™ Silicon Carbide (SiC) Schottky Diode, Infineon The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The thinQ!™ Schottky Diode by Infineon have a selection of voltages from 600V,650V and 1200V. Infineon’s 1200V SiC diode is highly efficient and has no losses when operating at 1200 volts. The SiC Schottky Diode Silicon Carbide devices offer features for high voltage power semiconductors such as higher breakdown field strength and thermal conductivity allowing greater efficiency levels. This generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications. Reduced EMI Diodes and Rectifiers, Infineon ; Diode Configuration Single; Maximum Continuous Forward Current 3A; Number of Elements per Chip 1; Rectifier Type Switching; Mounting Type Through Hole; Package Type TO-220; Diode Type Schottky; Peak Forward Voltage 2.8V; Pin Count 2+Tab; Length 10.2mm; Width 4.5mm; Height 15.95mm; Power Dissipation 38W; Maximum Operating Temperature +175 °C; Dimensions 10.2 x 4.5 x 15.95mm; Peak Reverse Current 150µA; Minimum Operating Temperature -55 °C;
Rectifier & Schottky Diodes
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