OSI Optoelectronics  OSD35-LR-D 二级管

OSI Optoelectronics OSD35-LR-D 二级管-产品快照

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OSI Optoelectronics
型号:
OSD35-LR-D

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产品介绍

OSI Optoelectronics OSD35-LR-D 二级管

OSI Optoelectronics OSD35-LR-D Extreme Ultraviolet (XUV) Si Photodiode, Through-hole Ceramic

OSI Optoelectronics

OSI Fully Depleted Series Photodiodes The OSD-35-LR-D large active area high speed detector, from OSI Optoelectronics can be fully depleted to achieve very low junction capacitance for fast response times. Operating at a higher reverse voltage, up to the maximum allowable value, the OSD-35-LR-D can achieve even faster response times in nano-seconds. The OSD-35-LR-D photodiode can be used for applications measuring high energy X-rays, as well as high energy particles such as electrons, alpha rays and heavy ions. Ceramic package with optically clear epoxyLarge Active AreaFully DepletableFast ResponseUltra Low Dark CurrentLow Capacitance Photodiodes, OSI Optoelectronics ; Spectrums Detected Extreme Ultraviolet (XUV); Wavelength of Peak Sensitivity 830nm; Package Type Ceramic; Mounting Type PCB Through Hole; Number of Pins 2; Spectral Range of Sensitivity 350 → 1100 nm; Diode Material Si; Minimum Wavelength Detected 350nm; Maximum Wavelength Detected 1100nm; Length 9.91mm; Width 8.89mm; Height 2.03mm; Dimensions 9.91 x 8.89 x 2.03mm; Polarity Forward; Peak Photo Sensitivity 0.54A/W;

Photodiodes

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