MagnaChip MMF60R580PTH 晶体管-产品快照
- 品牌:
- MagnaChip
- 型号:
- MMF60R580PTH
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| 供应商名称 | 电话 | 备注 |
|---|---|---|
| 暂无展示，可咨询在线客服 | 400-811-6961 |
 微信咨询，cs11@gchane.com , QQ1429311537
|
产品介绍
MagnaChip MMF60R580PTH 晶体管
MagnaChip MMF60R580PTH N-channel MOSFET Transistor, 8 A, 600 V, 3-Pin TO-220F
MagnaChip
Super Junction (SJ) MOSFET These MOSFET use MagnaChip's Super Junction technology to provide low on-resistance and gate charge. They are highly efficient through the use of optimised charge coupling technology. Low EMILow power loss through high speed switching and low on-resistance MOSFET Transistors, MagnaChip ; Channel Type N; Maximum Continuous Drain Current 8 A; Maximum Drain Source Voltage 600 V; Maximum Drain Source Resistance 0.58 Ω; Maximum Gate Threshold Voltage 4V; Maximum Gate Source Voltage ±30 V; Package Type TO-220F; Mounting Type Through Hole; Pin Count 3; Channel Mode Enhancement; Category Power MOSFET; Maximum Power Dissipation 26 W; Configuration Single; Dimensions 10.71 x 4.93 x 16.13mm; Length 10.71mm; Maximum Operating Temperature +150 °C; Height 16.13mm; Number of Elements per Chip 1; Width 4.93mm; Typical Turn-Off Delay Time 48 ns; Forward Diode Voltage 1.4V; Typical Input Capacitance @ Vds 575 pF @ 25 V; Typical Gate Charge @ Vgs 18 nC @ 10 V; Minimum Operating Temperature -55 °C; Typical Turn-On Delay Time 14 ns; Transistor Material Si;
MOSFET Transistors
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