Infineon IPD25CN10NG 晶体管-产品快照
- 品牌:
- Infineon
- 型号:
- IPD25CN10NG
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| 供应商名称 | 电话 | 备注 |
|---|---|---|
| 暂无展示，可咨询在线客服 | 400-811-6961 |
 微信咨询，cs10@gchane.com , QQ1653501665
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产品介绍
Infineon IPD25CN10NG 晶体管
Infineon IPD25CN10NG N-channel MOSFET Transistor, 35 A, 100 V, 3-Pin TO-252
Infineon
Infineon OptiMOS™2 Power MOSFET Family Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types. MOSFET Transistors, Infineon Infineon’s large and comprehensive portfolio of MOSFET devices includes the OptiMOS™ and CoolMOS™ families. These products deliver best-in-class performance from the latest generation of state-of-the-art power MOSFETs ; Channel Type N; Maximum Continuous Drain Current 35 A; Maximum Drain Source Voltage 100 V; Maximum Drain Source Resistance 0.026 Ω; Maximum Gate Threshold Voltage 4V; Minimum Gate Threshold Voltage 2V; Maximum Gate Source Voltage ±20 V; Package Type TO-252; Mounting Type Surface Mount; Pin Count 3; Channel Mode Enhancement; Category Power Transistor; Maximum Power Dissipation 71 W; Configuration Single; Typical Turn-Off Delay Time 13 ns; Dimensions 6.73 x 6.22 x 2.41mm; Height 2.41mm; Transistor Material Si; Maximum Operating Temperature +175 °C; Typical Gate Charge @ Vgs 23 nC @ 10 V; Minimum Operating Temperature -55 °C; Typical Turn-On Delay Time 10 ns; Typical Input Capacitance @ Vds 1560 pF @ 50 V; Length 6.73mm; Number of Elements per Chip 1; Width 6.22mm;
MOSFET Transistors
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