Infineon IPB042N10N3G 晶体管-产品快照
- 品牌:
- Infineon
- 型号:
- IPB042N10N3G
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| 供应商名称 | 电话 | 备注 |
|---|---|---|
| 暂无展示，可咨询在线客服 | 400-811-6961 |
 微信咨询，as10@gchane.com , QQ3350168184
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产品介绍
Infineon IPB042N10N3G 晶体管
Infineon IPB042N10N3G N-channel MOSFET Transistor, 100 A, 100 V, 2+Tab-Pin TO-263
Infineon
Infineon OptiMOS™3 Power MOSFETs, 100V and over MOSFET Transistors, Infineon Infineon’s large and comprehensive portfolio of MOSFET devices includes the OptiMOS™ and CoolMOS™ families. These products deliver best-in-class performance from the latest generation of state-of-the-art power MOSFETs ; Channel Type N; Maximum Continuous Drain Current 100 A; Maximum Drain Source Voltage 100 V; Maximum Drain Source Resistance 0.0074 Ω; Maximum Gate Threshold Voltage 3.5V; Minimum Gate Threshold Voltage 2V; Maximum Gate Source Voltage ±20 V; Package Type TO-263; Mounting Type Surface Mount; Pin Count 2+Tab; Channel Mode Enhancement; Category Power Transistor; Maximum Power Dissipation 214 W; Configuration Single; Height 4.57mm; Maximum Operating Temperature +175 °C; Length 10.31mm; Dimensions 10.31 x 9.45 x 4.57mm; Transistor Material Si; Typical Turn-On Delay Time 27 ns; Typical Gate Charge @ Vgs 88 nC @ 10 V; Typical Input Capacitance @ Vds 6320 pF @ 50 V; Typical Turn-Off Delay Time 48 ns; Width 9.45mm; Number of Elements per Chip 1; Minimum Operating Temperature -55 °C;
MOSFET Transistors
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