ON Semiconductor NTD2955-1G 晶体管-产品快照
- 品牌:
- ON Semiconductor
- 型号:
- NTD2955-1G
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|---|---|---|
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 微信咨询，as10@gchane.com , QQ3350168184
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产品介绍
ON Semiconductor NTD2955-1G 晶体管
ON Semiconductor NTD2955-1G P-channel MOSFET Transistor, 12 A, 60 V, 3-Pin IPAK
ON Semiconductor
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor MOSFET Transistors, ON Semiconductor ; Channel Type P; Maximum Continuous Drain Current 12 A; Maximum Drain Source Voltage 60 V; Maximum Drain Source Resistance 0.18 Ω; Maximum Gate Threshold Voltage 4V; Maximum Gate Source Voltage ±20 (Continuous) V, ±25 (Non-Repetitive) V; Package Type IPAK; Mounting Type Through Hole; Pin Count 3; Channel Mode Enhancement; Category Power MOSFET; Maximum Power Dissipation 55 W; Typical Input Capacitance @ Vds 500 pF @ -25 V dc; Typical Gate Charge @ Vgs 15 nC @ -10 V dc; Typical Turn-Off Delay Time 26 ns; Maximum Operating Temperature +175 °C; Number of Elements per Chip 1; Minimum Operating Temperature -55 °C; Height 6.35mm; Length 6.73mm; Dimensions 6.73 x 2.38 x 6.35mm; Transistor Material Si; Typical Turn-On Delay Time 10 ns; Width 2.38mm;
MOSFET Transistors
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