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产品介绍
Rohm SCT2450KEC 晶体管
ROHM SCT2450KEC N-channel MOSFET Transistor, 10 A, 1200 V, 3-Pin TO-247
ROHM
N-Channel SiC MOSFET Transistors, ROHM Silicon Carbide (SiC) MOSFETs feature lower switching losses and superior high temperature operating characteristics than their silicon counterparts and are ideally suited to high-efficiency high frequency switching applications. MOSFET Transistors, ROHM ; Channel Type N; Maximum Continuous Drain Current 10 A; Maximum Drain Source Voltage 1200 V; Maximum Drain Source Resistance 0.61 Ω; Maximum Gate Threshold Voltage 4V; Maximum Gate Source Voltage 22 V; Package Type TO-247; Mounting Type Through Hole; Pin Count 3; Channel Mode Enhancement; Category Power MOSFET; Maximum Power Dissipation 85 W; Configuration Single; Number of Elements per Chip 1; Width 20.95mm; Height 5.03mm; Typical Input Capacitance @ Vds 463 pF@ 800 V; Typical Gate Charge @ Vgs 27 nC@ 18 V; Typical Turn-Off Delay Time 38 ns; Maximum Operating Temperature +175 °C; Typical Turn-On Delay Time 19 ns; Length 15.9mm; Dimensions 15.9 x 5.03 x 20.95mm;
MOSFET Transistors
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