Vishay威世 SI8805EDB-T2-E1 晶体管-产品快照
- 品牌:
- Vishay
- 型号:
- SI8805EDB-T2-E1
* 所有产品信息均源于第三方公开数据或用户上传,工业链仅整合供参考,真实价格货期请联系供应商确认.
供应商名称 | 电话 | 备注 |
---|---|---|
欧时电子元件(上海)有限公司 | ||
TME | ||
富昌电子(上海)有限公司 | 400 821 6206 |
产品介绍
Vishay威世 SI8805EDB-T2-E1 晶体管
Vishay SI8805EDB-T2-E1 P-channel MOSFET Transistor, 2.5 A, 8 V, 4-Pin MICRO FOOT
Vishay
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor ; Channel Type P; Maximum Continuous Drain Current 2.5 A; Maximum Drain Source Voltage 8 V; Maximum Drain Source Resistance 0.29 Ω; Minimum Gate Threshold Voltage 0.35V; Maximum Gate Source Voltage ±5 V; Package Type MICRO FOOT; Mounting Type Surface Mount; Pin Count 4; Channel Mode Enhancement; Category Power MOSFET; Maximum Power Dissipation 0.9 W; Configuration Dual Source; Width 0.84mm; Number of Elements per Chip 1; Typical Turn-On Delay Time 13 ns; Minimum Operating Temperature -55 °C; Typical Gate Charge @ Vgs 6.7 nC @ -4.5; Length 0.84mm; Dimensions 0.84 x 0.84 x 0.213mm; Transistor Material Si; Height 0.213mm; Maximum Operating Temperature +150 °C; Typical Turn-Off Delay Time 25 ns;
MOSFET Transistors