Vishay威世 SIA533EDJ-T1-GE3 晶体管-产品快照
- 品牌:
- Vishay
- 型号:
- SIA533EDJ-T1-GE3
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| 供应商名称 | 电话 | 备注 |
|---|---|---|
| 欧时电子元件（上海）有限公司 | ||
| TME | ||
| 富昌电子（上海）有限公司 | 400 821 6206 |
产品介绍
Vishay威世 SIA533EDJ-T1-GE3 晶体管
Vishay SIA533EDJ-T1-GE3 Dual N/P-channel MOSFET Transistor, 4.5 A, 12 V, 6-Pin SC-70
Vishay
Dual N/P-Channel MOSFET, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor ; Channel Type N, P; Maximum Continuous Drain Current 4.5 A; Maximum Drain Source Voltage 12 V; Maximum Drain Source Resistance 0.07 , 0.215 ; Minimum Gate Threshold Voltage 0.4V; Maximum Gate Source Voltage ±8 V; Package Type SC-70; Mounting Type Surface Mount; Pin Count 6; Channel Mode Enhancement; Category Power MOSFET; Maximum Power Dissipation 7.8 W; Configuration Dual; Typical Gate Charge @ Vgs 10 (N Channel) nC @ 10 V, 13 (P Channel) nC @ -10 V; Minimum Operating Temperature -55 °C; Typical Turn-On Delay Time 10 (N) ns, 15 (P) ns; Transistor Material Si; Dimensions 2.15 x 2.15 x 0.8mm; Height 0.8mm; Width 2.15mm; Typical Turn-Off Delay Time 20 ns, 25 ns; Number of Elements per Chip 2; Maximum Operating Temperature +150 °C; Typical Input Capacitance @ Vds 420 pF@ 6 V, 545 pF@ -6 V; Length 2.15mm;
MOSFET Transistors
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