Fairchild仙童 HUF75345P3 晶体管-产品快照
- 品牌:
- Fairchild
- 型号:
- HUF75345P3
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产品介绍
Fairchild仙童 HUF75345P3 晶体管
Fairchild HUF75345P3 N-channel MOSFET Transistor, 75 A, 55 V, 3-Pin TO-220AB
Fairchild Semiconductor
UltraFET® MOSFET, Fairchild Semiconductor UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management. MOSFET Transistors, Fairchild Semiconductor Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer. ; Channel Type N; Maximum Continuous Drain Current 75 A; Maximum Drain Source Voltage 55 V; Maximum Drain Source Resistance 0.007 Ω; Minimum Gate Threshold Voltage 2V; Maximum Gate Source Voltage ±20 V; Package Type TO-220AB; Mounting Type Through Hole; Pin Count 3; Channel Mode Enhancement; Category Power MOSFET; Maximum Power Dissipation 325 W; Configuration Single; Height 16.3mm; Typical Turn-Off Delay Time 42 ns; Number of Elements per Chip 1; Typical Input Capacitance @ Vds 4000 pF@ 25 V; Maximum Operating Temperature +175 °C; Length 10.67mm; Transistor Material Si; Width 4.7mm; Typical Turn-On Delay Time 195 ns; Typical Gate Charge @ Vgs 220 nC @ V @ 0 → 20; Minimum Operating Temperature -55 °C; Dimensions 10.67 x 4.7 x 16.3mm;
MOSFET Transistors