Vishay威世 SIHP25N40D-GE3 晶体管-产品快照
- 品牌:
- Vishay
- 型号:
- SIHP25N40D-GE3
* 所有产品信息均源于第三方公开数据或用户上传,工业链仅整合供参考,真实价格货期请联系供应商确认.
供应商名称 | 电话 | 备注 |
---|---|---|
欧时电子元件(上海)有限公司 | ||
TME | ||
富昌电子(上海)有限公司 | 400 821 6206 |
产品介绍
Vishay威世 SIHP25N40D-GE3 晶体管
Vishay SIHP25N40D-GE3 N-channel MOSFET Transistor, 25 A, 400 V, 3-Pin TO-220AB
Vishay
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor ; Channel Type N; Maximum Continuous Drain Current 25 A; Maximum Drain Source Voltage 400 V; Maximum Drain Source Resistance 0.17 Ω; Minimum Gate Threshold Voltage 3V; Maximum Gate Source Voltage ±30 V; Package Type TO-220AB; Mounting Type Through Hole; Pin Count 3; Channel Mode Enhancement; Category Power MOSFET; Maximum Power Dissipation 278 W; Configuration Single; Maximum Operating Temperature +150 °C; Height 9.01mm; Width 4.65mm; Length 10.51mm; Dimensions 10.51 x 4.65 x 9.01mm; Typical Input Capacitance @ Vds 1707 pF @ 100 V; Typical Turn-Off Delay Time 40 ns; Typical Turn-On Delay Time 21 ns; Number of Elements per Chip 1; Minimum Operating Temperature -55 °C; Typical Gate Charge @ Vgs 44 nC @ 10 V; Transistor Material Si;
MOSFET Transistors