Infineon AUIRLS3036-7P 晶体管-产品快照
- 品牌:
- Infineon
- 型号:
- AUIRLS3036-7P
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产品介绍
Infineon AUIRLS3036-7P 晶体管
Infineon AUIRLS3036-7P N-channel MOSFET Transistor, 240 A, 300 A, 60 V, 7-Pin D2PAK
Infineon
Automotive N-Channel Power MOSFET, Infineon Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon (IR) Infineon comprehensive portfolio of rugged single and dual N-channel and P-channel devices offer fast switching speeds and addresses a wide variety of power requirements. Applications range from ac-dc and DC-DC power supplies to audio and consumer electronics and from motor control to lighting and home appliances. ; Channel Type N; Maximum Continuous Drain Current 240 A, 300 A; Maximum Drain Source Voltage 60 V; Maximum Drain Source Resistance 0.0019 Ω; Maximum Gate Threshold Voltage 2.5V; Minimum Gate Threshold Voltage 1V; Maximum Gate Source Voltage ±16 V; Package Type D2PAK; Mounting Type Surface Mount; Pin Count 7; Channel Mode Enhancement; Category Power MOSFET; Maximum Power Dissipation 380 W; Configuration Single; Typical Input Capacitance @ Vds 11270 pF @ 25 V; Typical Turn-Off Delay Time 89 ns; Typical Turn-On Delay Time 81 ns; Minimum Operating Temperature -55 °C; Height 4.83mm; Transistor Material Si; Maximum Operating Temperature +175 °C; Width 9.65mm; Number of Elements per Chip 1; Dimensions 10.67 x 9.65 x 4.83mm; Length 10.67mm; Typical Gate Charge @ Vgs 110 nC @ 10 V;
MOSFET Transistors