Fairchild仙童 FDC2612 晶体管-产品快照
- 品牌:
- Fairchild
- 型号:
- FDC2612
* 所有产品信息均源于第三方公开数据或用户上传,工业链仅整合供参考,真实价格货期请联系供应商确认.
供应商名称 | 电话 | 备注 |
---|---|---|
暂无展示,可咨询在线客服 | 400-811-6961 | 微信咨询,as10@gchane.com , QQ3350168184 |
产品介绍
Fairchild仙童 FDC2612 晶体管
Fairchild FDC2612 N-channel MOSFET Transistor, 1.1 A, 200 V, 6-Pin SOT-23
Fairchild Semiconductor
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor MOSFET Transistors, Fairchild Semiconductor Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer. ; Channel Type N; Maximum Continuous Drain Current 1.1 A; Maximum Drain Source Voltage 200 V; Maximum Drain Source Resistance 1.43 Ω; Minimum Gate Threshold Voltage 2V; Maximum Gate Source Voltage ±20 V; Package Type SOT-23; Mounting Type Surface Mount; Pin Count 6; Channel Mode Enhancement; Category Power MOSFET; Maximum Power Dissipation 1.6 W; Configuration Quad Drain; Width 1.7mm; Maximum Operating Temperature +150 °C; Typical Gate Charge @ Vgs 11 nC @ 10 V; Typical Input Capacitance @ Vds 234 pF @ 100 V; Typical Turn-Off Delay Time 17 ns; Number of Elements per Chip 1; Length 3mm; Height 1mm; Minimum Operating Temperature -55 °C; Dimensions 3 x 1.7 x 1mm; Typical Turn-On Delay Time 6 ns; Transistor Material Si;
MOSFET Transistors