Infineon IPW60R041C6 晶体管-产品快照
- 品牌:
- Infineon
- 型号:
- IPW60R041C6
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| 供应商名称 | 电话 | 备注 |
|---|---|---|
| 暂无展示，可咨询在线客服 | 400-811-6961 |
 微信咨询，cs10@gchane.com , QQ1653501665
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产品介绍
Infineon IPW60R041C6 晶体管
Infineon IPW60R041C6 N-channel MOSFET Transistor, 77 A, 650 V, 3-Pin TO-247
Infineon
Infineon CoolMOS™C6/C7 Power MOSFET MOSFET Transistors, Infineon Infineon’s large and comprehensive portfolio of MOSFET devices includes the OptiMOS™ and CoolMOS™ families. These products deliver best-in-class performance from the latest generation of state-of-the-art power MOSFETs ; Channel Type N; Maximum Continuous Drain Current 77 A; Maximum Drain Source Voltage 650 V; Maximum Drain Source Resistance 0.041 Ω; Maximum Gate Threshold Voltage 3.5V; Minimum Gate Threshold Voltage 2.5V; Maximum Gate Source Voltage ±20 V; Package Type TO-247; Mounting Type Through Hole; Pin Count 3; Channel Mode Enhancement; Category Power MOSFET; Maximum Power Dissipation 481 W; Number of Elements per Chip 1; Dimensions 16.13 x 5.21 x 21.1mm; Length 16.13mm; Typical Gate Charge @ Vgs 290 nC @ 10 V; Typical Input Capacitance @ Vds 6530 pF @ 100 V; Typical Turn-Off Delay Time 130 ns; Maximum Operating Temperature +150 °C; Transistor Material Si; Height 21.1mm; Minimum Operating Temperature -55 °C; Width 5.21mm; Typical Turn-On Delay Time 23 ns;
MOSFET Transistors
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