Fairchild仙童 FDC658AP 晶体管-产品快照
- 品牌:
- Fairchild
- 型号:
- FDC658AP
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|---|---|---|
| 暂无展示，可咨询在线客服 | 400-811-6961 |
 微信咨询，cs11@gchane.com , QQ1429311537
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产品介绍
Fairchild仙童 FDC658AP 晶体管
Fairchild FDC658AP P-channel MOSFET Transistor, 4 A, 30 V, 6-Pin SOT-23
Fairchild Semiconductor
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET. MOSFET Transistors, Fairchild Semiconductor Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer. ; Channel Type P; Maximum Continuous Drain Current 4 A; Maximum Drain Source Voltage 30 V; Maximum Drain Source Resistance 0.075 Ω; Minimum Gate Threshold Voltage 1V; Maximum Gate Source Voltage ±25 V; Package Type SOT-23; Mounting Type Surface Mount; Pin Count 6; Channel Mode Enhancement; Category Power MOSFET; Maximum Power Dissipation 1.6 W; Configuration Single; Dimensions 3 x 1.7 x 1mm; Transistor Material Si; Typical Turn-On Delay Time 7 ns; Minimum Operating Temperature -55 °C; Typical Gate Charge @ Vgs 6 nC @ -5 V; Typical Input Capacitance @ Vds 470 pF @ -15 V; Typical Turn-Off Delay Time 16 ns; Number of Elements per Chip 1; Height 1mm; Maximum Operating Temperature +150 °C; Length 3mm; Width 1.7mm;
MOSFET Transistors
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