Vishay威世 SI2308BDS-T1-GE3 晶体管-产品快照
- 品牌:
- Vishay
- 型号:
- SI2308BDS-T1-GE3
* 所有产品信息均源于第三方公开数据或用户上传，工业链仅整合供参考，真实价格货期请联系供应商确认.
| 供应商名称 | 电话 | 备注 |
|---|---|---|
| 欧时电子元件（上海）有限公司 | ||
| TME | ||
| 富昌电子（上海）有限公司 | 400 821 6206 |
产品介绍
Vishay威世 SI2308BDS-T1-GE3 晶体管
Vishay SI2308BDS-T1-GE3 N-channel MOSFET Transistor, 1.9 A, 60 V, 3-Pin SOT-23
Vishay
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor ; Channel Type N; Maximum Continuous Drain Current 1.9 A; Maximum Drain Source Voltage 60 V; Maximum Drain Source Resistance 0.156 Ω; Minimum Gate Threshold Voltage 1V; Maximum Gate Source Voltage ±20 V; Package Type SOT-23; Mounting Type Surface Mount; Pin Count 3; Channel Mode Enhancement; Category Power MOSFET; Maximum Power Dissipation 1.09 W; Configuration Single; Width 1.4mm; Typical Input Capacitance @ Vds 190 pF@ 30 V; Typical Gate Charge @ Vgs 2.3 nC @ 4.5 V, 4.5 nC @ 10 V; Minimum Operating Temperature -55 °C; Typical Turn-On Delay Time 15 ns; Transistor Material Si; Number of Elements per Chip 1; Height 1.02mm; Maximum Operating Temperature +150 °C; Length 3.04mm; Dimensions 3.04 x 1.4 x 1.02mm; Typical Turn-Off Delay Time 11 ns;
MOSFET Transistors
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