Fairchild仙童 FDP52N20 晶体管-产品快照
- 品牌:
- Fairchild
- 型号:
- FDP52N20
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产品介绍
Fairchild仙童 FDP52N20 晶体管
Fairchild FDP52N20 N-channel MOSFET Transistor, 52 A, 200 V, 3-Pin TO-220AB
Fairchild Semiconductor
UniFET™ N-Channel MOSFET, Fairchild Semiconductor UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts. MOSFET Transistors, Fairchild Semiconductor Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer. ; Channel Type N; Maximum Continuous Drain Current 52 A; Maximum Drain Source Voltage 200 V; Maximum Drain Source Resistance 0.041 Ω; Minimum Gate Threshold Voltage 3V; Maximum Gate Source Voltage ±30 V; Package Type TO-220AB; Mounting Type Through Hole; Pin Count 3; Channel Mode Enhancement; Category Power MOSFET; Maximum Power Dissipation 357 W; Configuration Single; Typical Turn-Off Delay Time 48 ns; Typical Input Capacitance @ Vds 2230 pF @ 25 V; Typical Gate Charge @ Vgs 49 nC @ 10 V; Minimum Operating Temperature -55 °C; Typical Turn-On Delay Time 53 ns; Transistor Material Si; Length 10.1mm; Height 9.4mm; Maximum Operating Temperature +150 °C; Dimensions 10.1 x 4.7 x 9.4mm; Number of Elements per Chip 1; Width 4.7mm;
MOSFET Transistors