Fairchild仙童 FDA18N50 晶体管-产品快照
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- Fairchild
- 型号:
- FDA18N50
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产品介绍
Fairchild仙童 FDA18N50 晶体管
Fairchild FDA18N50 N-channel MOSFET Transistor, 19 A, 500 V, 3-Pin TO-3P
Fairchild Semiconductor
UniFET™ N-Channel MOSFET, Fairchild Semiconductor UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts. MOSFET Transistors, Fairchild Semiconductor Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer. ; Channel Type N; Maximum Continuous Drain Current 19 A; Maximum Drain Source Voltage 500 V; Maximum Drain Source Resistance 0.265 Ω; Minimum Gate Threshold Voltage 3V; Maximum Gate Source Voltage ±30 V; Package Type TO-3P; Mounting Type Through Hole; Pin Count 3; Channel Mode Enhancement; Category Power MOSFET; Maximum Power Dissipation 239 W; Configuration Single; Length 15.8mm; Minimum Operating Temperature -55 °C; Typical Gate Charge @ Vgs 45 nC @ 10 V; Typical Input Capacitance @ Vds 2200 pF@ 25 V; Transistor Material Si; Height 18.9mm; Typical Turn-Off Delay Time 95 ns; Number of Elements per Chip 1; Width 5mm; Dimensions 15.8 x 5 x 18.9mm; Typical Turn-On Delay Time 55 ns; Maximum Operating Temperature +150 °C;
MOSFET Transistors
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