Fairchild仙童 FQD1N80TM 晶体管-产品快照
- 品牌:
- Fairchild
- 型号:
- FQD1N80TM
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产品介绍
Fairchild仙童 FQD1N80TM 晶体管
Fairchild FQD1N80TM N-channel MOSFET Transistor, 1 A, 800 V, 3-Pin DPAK
Fairchild Semiconductor
QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor Fairchild Semiconductors new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices. MOSFET Transistors, Fairchild Semiconductor Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer. ; Channel Type N; Maximum Continuous Drain Current 1 A; Maximum Drain Source Voltage 800 V; Maximum Drain Source Resistance 20 Ω; Minimum Gate Threshold Voltage 3V; Maximum Gate Source Voltage ±30 V; Package Type DPAK; Mounting Type Surface Mount; Pin Count 3; Channel Mode Enhancement; Category Power MOSFET; Maximum Power Dissipation 2.5 W; Configuration Single; Minimum Operating Temperature -55 °C; Typical Turn-On Delay Time 10 ns; Dimensions 6.6 x 6.1 x 2.3mm; Length 6.6mm; Maximum Operating Temperature +150 °C; Height 2.3mm; Transistor Material Si; Number of Elements per Chip 1; Width 6.1mm; Typical Turn-Off Delay Time 15 ns; Typical Input Capacitance @ Vds 150 pF@ 25 V; Typical Gate Charge @ Vgs 5.5 nC @ 10 V;
MOSFET Transistors