Infineon IRLR3705ZPBF 晶体管-产品快照
- 品牌:
- Infineon
- 型号:
- IRLR3705ZPBF
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产品介绍
Infineon IRLR3705ZPBF 晶体管
Infineon IRLR3705ZPBF N-channel MOSFET Transistor, 89 A, 55 V, 3-Pin DPAK
Infineon
N-Channel Power MOSFET 80A to 99A, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon (IR) Infineon comprehensive portfolio of rugged single and dual N-channel and P-channel devices offer fast switching speeds and addresses a wide variety of power requirements. Applications range from ac-dc and DC-DC power supplies to audio and consumer electronics and from motor control to lighting and home appliances. ; Channel Type N; Maximum Continuous Drain Current 89 A; Maximum Drain Source Voltage 55 V; Maximum Drain Source Resistance 0.008 Ω; Maximum Gate Threshold Voltage 3V; Minimum Gate Threshold Voltage 1V; Maximum Gate Source Voltage ±20 V; Package Type DPAK; Mounting Type Surface Mount; Pin Count 3; Channel Mode Enhancement; Category Power MOSFET; Maximum Power Dissipation 130 W; Configuration Single; Height 2.39mm; Width 6.22mm; Number of Elements per Chip 1; Transistor Material Si; Typical Input Capacitance @ Vds 2900 pF@ 25 V; Typical Turn-On Delay Time 17 ns; Dimensions 6.73 x 6.22 x 2.39mm; Length 6.73mm; Minimum Operating Temperature -55 °C; Maximum Operating Temperature +175 °C; Typical Turn-Off Delay Time 33 ns; Typical Gate Charge @ Vgs 44 nC @ 5 V;
MOSFET Transistors
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