Infineon IRFR2405PBF 晶体管-产品快照
- 品牌:
- Infineon
- 型号:
- IRFR2405PBF
* 所有产品信息均源于第三方公开数据或用户上传,工业链仅整合供参考,真实价格货期请联系供应商确认.
供应商名称 | 电话 | 备注 |
---|---|---|
暂无展示,可咨询在线客服 | 400-811-6961 | 微信咨询,cs10@gchane.com , QQ1653501665 |
产品介绍
Infineon IRFR2405PBF 晶体管
Infineon IRFR2405PBF N-channel MOSFET Transistor, 56 A, 55 V, 3-Pin DPAK
Infineon
N-Channel Power MOSFET 50A to 59A, Infineon Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon (IR) Infineon comprehensive portfolio of rugged single and dual N-channel and P-channel devices offer fast switching speeds and addresses a wide variety of power requirements. Applications range from ac-dc and DC-DC power supplies to audio and consumer electronics and from motor control to lighting and home appliances. ; Channel Type N; Maximum Continuous Drain Current 56 A; Maximum Drain Source Voltage 55 V; Maximum Drain Source Resistance 0.016 Ω; Maximum Gate Threshold Voltage 4V; Minimum Gate Threshold Voltage 2V; Maximum Gate Source Voltage ±20 V; Package Type DPAK; Mounting Type Surface Mount; Pin Count 3; Channel Mode Enhancement; Category Power MOSFET; Maximum Power Dissipation 110 W; Configuration Single; Typical Turn-Off Delay Time 55 ns; Typical Turn-On Delay Time 15 ns; Minimum Operating Temperature -55 °C; Typical Gate Charge @ Vgs 70 nC @ 10 V; Typical Input Capacitance @ Vds 2430 pF@ 25 V; Height 2.39mm; Maximum Operating Temperature +175 °C; Length 6.73mm; Dimensions 6.73 x 6.22 x 2.39mm; Transistor Material Si; Number of Elements per Chip 1; Width 6.22mm;
MOSFET Transistors