Infineon IRF3415SPBF 晶体管-产品快照
- 品牌:
- Infineon
- 型号:
- IRF3415SPBF
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产品介绍
Infineon IRF3415SPBF 晶体管
Infineon IRF3415SPBF N-channel MOSFET Transistor, 43 A, 150 V, 3-Pin D2PAK
Infineon
N-Channel Power MOSFET 40A to 49A, Infineon The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. MOSFET Transistors, Infineon (IR) Infineon comprehensive portfolio of rugged single and dual N-channel and P-channel devices offer fast switching speeds and addresses a wide variety of power requirements. Applications range from ac-dc and DC-DC power supplies to audio and consumer electronics and from motor control to lighting and home appliances. ; Channel Type N; Maximum Continuous Drain Current 43 A; Maximum Drain Source Voltage 150 V; Maximum Drain Source Resistance 0.042 Ω; Maximum Gate Threshold Voltage 4V; Minimum Gate Threshold Voltage 2V; Maximum Gate Source Voltage ±20 V; Package Type D2PAK; Mounting Type Surface Mount; Pin Count 3; Channel Mode Enhancement; Category Power MOSFET; Maximum Power Dissipation 3.8 W; Configuration Single; Height 4.83mm; Maximum Operating Temperature +175 °C; Transistor Material Si; Typical Turn-On Delay Time 12 ns; Minimum Operating Temperature -55 °C; Typical Gate Charge @ Vgs 200 nC @ 10 V; Typical Input Capacitance @ Vds 2400 pF@ 25 V; Typical Turn-Off Delay Time 71 ns; Number of Elements per Chip 1;
MOSFET Transistors