Infineon IRF7389PBF 晶体管-产品快照
- 品牌:
- Infineon
- 型号:
- IRF7389PBF
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|---|---|---|
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 微信咨询，cs10@gchane.com , QQ1653501665
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产品介绍
Infineon IRF7389PBF 晶体管
Infineon IRF7389PBF Dual N/P-channel MOSFET Transistor, 5.3 A, 7.3 A, 30 V, 8-Pin SOIC
Infineon
Dual N/P-Channel Power MOSFET, Infineon Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration. MOSFET Transistors, Infineon (IR) Infineon comprehensive portfolio of rugged single and dual N-channel and P-channel devices offer fast switching speeds and addresses a wide variety of power requirements. Applications range from ac-dc and DC-DC power supplies to audio and consumer electronics and from motor control to lighting and home appliances. ; Channel Type N, P; Maximum Continuous Drain Current 5.3 A, 7.3 A; Maximum Drain Source Voltage 30 V; Maximum Drain Source Resistance 0.029 , 0.058 ; Maximum Gate Threshold Voltage 1V; Minimum Gate Threshold Voltage 1V; Maximum Gate Source Voltage ±20 V; Package Type SOIC; Mounting Type Surface Mount; Pin Count 8; Channel Mode Enhancement; Category Power MOSFET; Maximum Power Dissipation 2.5 W; Configuration Dual, Dual Drain; Maximum Operating Temperature +150 °C; Length 5mm; Width 4mm; Number of Elements per Chip 2; Transistor Material Si; Typical Turn-On Delay Time 8.1 (N) ns, 13 (P) ns; Height 1.5mm; Typical Gate Charge @ Vgs 22 nC @ 10 V (N-Channel), 23 nC @ 10 V (P-Channel); Typical Input Capacitance @ Vds 650 pF@ 25 V, 710 pF@ 25 V; Typical Turn-Off Delay Time 26 ns, 34 ns; Dimensions 5 x 4 x 1.5mm; Minimum Operating Temperature -55 °C;
MOSFET Transistors
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