Renesas瑞萨 NE3515S02-A 晶体管-产品快照
- 品牌:
- Renesas
- 型号:
- NE3515S02-A
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|---|---|---|
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产品介绍
Renesas瑞萨 NE3515S02-A 晶体管
Renesas NE3515S02-A, Dual Source N-channel JFET Transistor, 4 V, Idss 32 → 88mA, 4-Pin SO2
Renesas Electronics
N-Channel HEMT, Renesas A High-electron-mobility transistor (HEMT, also known as a hetero-structure or hetero-junction FET) is a junction FET utilising two materials with different band gaps (i.e. a hetero-junction) as the channel instead of the doped region used in a MOSFET. HEMT transistors exhibit good high frequency characteristics and are generally used in small-signal low-noise RF applications.HEMT, HFET, HJ-FET and MODFET are all terms used to describe transistors of this type. JFET Transistors A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices. ; Channel Type N; Idss Drain-Source Cut-off Current 32 → 88mA; Maximum Continuous Drain Current 88 mA; Maximum Drain Source Voltage 4 V; Maximum Gate Source Voltage -3 V; Configuration Dual Source; Mounting Type Surface Mount; Package Type SO2; Pin Count 4; Dimensions 2.6 x 2.6 x 1.5mm; Length 2.6mm; Maximum Operating Temperature +125 °C; Width 2.6mm; Height 1.5mm;
JFET Transistors
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