ON Semiconductor NGTB15N60R2FG 晶体管-产品快照
- 品牌:
- ON Semiconductor
- 型号:
- NGTB15N60R2FG
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产品介绍
ON Semiconductor NGTB15N60R2FG 晶体管
ON Semiconductor NGTB15N60R2FG, IGBT Transistor, 24 A 600 V, 1MHz, 3-Pin TO-220F
ON Semiconductor
IGBT Discretes, ON Semiconductor Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. IGBT Discretes, ON Semiconductor The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. ; Maximum Continuous Collector Current 24 A; Maximum Collector Emitter Voltage 600 V; Maximum Gate Emitter Voltage ±20V; Maximum Power Dissipation 54 W; Package Type TO-220F; Mounting Type Through Hole; Channel Type N; Pin Count 3; Switching Speed 1MHz; Configuration Single; Length 10.16mm; Width 4.7mm; Height 15.87mm; Dimensions 10.16 x 4.7 x 15.87mm; Gate Capacitance 2000pF; Maximum Operating Temperature +175 °C;
IGBT Transistors