Infineon IRGS4620DPBF 晶体管-产品快照
- 品牌:
- Infineon
- 型号:
- IRGS4620DPBF
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暂无展示,可咨询在线客服 | 400-811-6961 | 微信咨询,cs11@gchane.com , QQ1429311537 |
产品介绍
Infineon IRGS4620DPBF 晶体管
Infineon IRGS4620DPBF, IGBT Transistor, 32 A 600 V, 8 → 30kHz, 3-Pin D2PAK
Infineon
Single IGBT up to 20A, Infineon Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs IGBT Transistors, International Rectifier International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency. ; Maximum Continuous Collector Current 32 A; Maximum Collector Emitter Voltage 600 V; Maximum Gate Emitter Voltage ±20V; Maximum Power Dissipation 140 W; Package Type D2PAK; Mounting Type Surface Mount; Channel Type N; Pin Count 3; Switching Speed 8 → 30kHz; Configuration Single; Length 10.67mm; Width 9.65mm; Height 4.83mm; Dimensions 10.67 x 9.65 x 4.83mm; Minimum Operating Temperature -40 °C; Maximum Operating Temperature +175 °C;
IGBT Transistors