Infineon  IRGPS46160DPBF 晶体管

Infineon IRGPS46160DPBF 晶体管-产品快照

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Infineon
型号:
IRGPS46160DPBF

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产品介绍

Infineon IRGPS46160DPBF 晶体管

Infineon IRGPS46160DPBF, IGBT Transistor, 240 A 600 V, 8 → 30kHz, 3-Pin Super-247

Infineon

Single IGBT over 21A, Infineon Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's IGBT Transistors, International Rectifier International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency. ; Maximum Continuous Collector Current 240 A; Maximum Collector Emitter Voltage 600 V; Maximum Gate Emitter Voltage ±20V; Maximum Power Dissipation 750 W; Package Type Super-247; Mounting Type Through Hole; Channel Type N; Pin Count 3; Switching Speed 8 → 30kHz; Configuration Single; Length 16.1mm; Width 5.5mm; Height 20.8mm; Dimensions 16.1 x 5.5 x 20.8mm; Minimum Operating Temperature -55 °C; Maximum Operating Temperature +175 °C;

IGBT Transistors

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