Ixys艾赛斯 IXA12IF1200PB 晶体管-产品快照
- 品牌:
- Ixys
- 型号:
- IXA12IF1200PB
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 微信咨询，cs10@gchane.com , QQ1653501665
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产品介绍
Ixys艾赛斯 IXA12IF1200PB 晶体管
IXYS IXA12IF1200PB, IGBT Transistor, 20 A 1200 V, 3-Pin TO-220
IXYS
IGBT Discretes, IXYS XPT series The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages. High power density and low VCE(sat)Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltageShort circuit capability for 10usecPositive on-state voltage temperature coefficientOptional co-packed Sonic-FRD™ or HiPerFRED™ diodesInternational standard and proprietary high voltage packages IGBT Discretes & Modules, IXYS The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. ; Maximum Continuous Collector Current 20 A; Maximum Collector Emitter Voltage 1200 V; Maximum Gate Emitter Voltage ±20V; Maximum Power Dissipation 85 W; Package Type TO-220; Mounting Type Through Hole; Channel Type N; Pin Count 3; Configuration Single; Length 10.66mm; Width 4.82mm; Height 16mm; Dimensions 10.66 x 4.82 x 16mm; Minimum Operating Temperature -40 °C; Maximum Operating Temperature +125 °C;
IGBT Transistors
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