Ixys艾赛斯 IXYN80N90C3H1 晶体管-产品快照
- 品牌:
- Ixys
- 型号:
- IXYN80N90C3H1
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| 供应商名称 | 电话 | 备注 |
|---|---|---|
| 暂无展示，可咨询在线客服 | 400-811-6961 |
 微信咨询，cs11@gchane.com , QQ1429311537
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产品介绍
Ixys艾赛斯 IXYN80N90C3H1 晶体管
IXYS IXYN80N90C3H1, 340 A 900 V, 50kHz, 4-Pin SOT-227B
IXYS
IGBT Discretes, IXYS XPT series The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages. High power density and low VCE(sat)Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltageShort circuit capability for 10usecPositive on-state voltage temperature coefficientOptional co-packed Sonic-FRD™ or HiPerFRED™ diodesInternational standard and proprietary high voltage packages IGBT Discretes & Modules, IXYS The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. ; Maximum Continuous Collector Current 340 A; Maximum Collector Emitter Voltage 900 V; Maximum Gate Emitter Voltage ±20V; Maximum Power Dissipation 500 W; Package Type SOT-227B; Mounting Type Panel Mount; Channel Type N; Pin Count 4; Switching Speed 50kHz; Configuration Single; Length 38.23mm; Width 25.07mm; Height 9.6mm; Dimensions 38.23 x 25.07 x 9.6mm; Minimum Operating Temperature -55 °C; Maximum Operating Temperature +150 °C;
IGBT Transistors
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