Infineon IRGP4078DPBF 晶体管-产品快照
- 品牌:
- Infineon
- 型号:
- IRGP4078DPBF
* 所有产品信息均源于第三方公开数据或用户上传，工业链仅整合供参考，真实价格货期请联系供应商确认.
| 供应商名称 | 电话 | 备注 |
|---|---|---|
| 暂无展示，可咨询在线客服 | 400-811-6961 |
 微信咨询，cs11@gchane.com , QQ1429311537
|
产品介绍
Infineon IRGP4078DPBF 晶体管
Infineon IRGP4078DPBF, 50 A 600 V, 20kHz, 3-Pin TO-247AC
Infineon
Co-Pack IGBT over 21A, Infineon Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses. IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations IGBT Transistors, International Rectifier International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency. ; Maximum Continuous Collector Current 50 A; Maximum Collector Emitter Voltage 600 V; Maximum Gate Emitter Voltage ±20V; Maximum Power Dissipation 278 W; Package Type TO-247AC; Mounting Type Through Hole; Channel Type N; Pin Count 3; Switching Speed 20kHz; Configuration Single; Length 15.87mm; Width 5.31mm; Height 20.7mm; Dimensions 15.87 x 5.31 x 20.7mm; Maximum Operating Temperature +175 °C; Minimum Operating Temperature -55 °C;
IGBT Transistors
更多产品:
更多品牌:
