ON Semiconductor NGD8201ANT4G 晶体管-产品快照
- 品牌:
- ON Semiconductor
- 型号:
- NGD8201ANT4G
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产品介绍
ON Semiconductor NGD8201ANT4G 晶体管
ON Semiconductor NGD8201ANT4G, 50 A 440 V, 3-Pin DPAK
ON Semiconductor
IGBT Discretes, ON Semiconductor Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. IGBT Discretes, ON Semiconductor The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. ; Maximum Continuous Collector Current 50 A; Maximum Collector Emitter Voltage 440 V; Maximum Gate Emitter Voltage ±15V; Maximum Power Dissipation 125 W; Package Type DPAK; Mounting Type Surface Mount; Channel Type N; Pin Count 3; Configuration Single; Length 6.73mm; Width 7.49mm; Height 2.38mm; Dimensions 6.73 x 7.49 x 2.38mm; Maximum Operating Temperature +175 °C; Minimum Operating Temperature -55 °C;
IGBT Transistors
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