Infineon IRG4PC30KDPBF 晶体管-产品快照
- 品牌:
- Infineon
- 型号:
- IRG4PC30KDPBF
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| 供应商名称 | 电话 | 备注 |
|---|---|---|
| 暂无展示，可咨询在线客服 | 400-811-6961 |
 微信咨询，cs10@gchane.com , QQ1653501665
|
产品介绍
Infineon IRG4PC30KDPBF 晶体管
Infineon IRG4PC30KDPBF, 28 A 600 V, 3-Pin TO-247AC
Infineon
Co-Pack IGBT up to 20A, Infineon Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses. IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations IGBT Transistors, International Rectifier International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency. ; Maximum Continuous Collector Current 28 A; Maximum Collector Emitter Voltage 600 V; Maximum Gate Emitter Voltage ±20V; Package Type TO-247AC; Mounting Type Through Hole; Channel Type N; Pin Count 3; Configuration Single; Length 15.9mm; Width 5.3mm; Height 20.3mm; Dimensions 15.9 x 5.3 x 20.3mm; Maximum Operating Temperature +150 °C; Minimum Operating Temperature -55 °C;
IGBT Transistors
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