FUJI富士 6MBP50VBA-120-50 晶体管-产品快照
- 品牌:
- FUJI
- 型号:
- 6MBP50VBA-120-50
* 所有产品信息均源于第三方公开数据或用户上传，工业链仅整合供参考，真实价格货期请联系供应商确认.
| 供应商名称 | 电话 | 备注 |
|---|---|---|
| 上海昌誉电子科技有限公司 | 4006125198-822 | 进口连接器、集成电路IC |
| 深圳市日弘忠信电器有限公司 | 4000-226-036 | |
| 福建菱瑞智能科技有限公司 | 0591-88688288 | 气动、传感器等自动化元器件，集科工贸于一体的系统集成商。 |
| 深圳市行芝达电子有限公司 | 0755-25430790 | |
| 深圳市佑南实业有限公司 | 0755-82931159 | |
| 深圳市康元会电器有限公司 | 0755-83796087 | |
| 深圳市华光行电工器材有限公司 | ||
| 上海烨富自动化设备有限公司 | ||
| 纽康商事（上海）有限公司 | ||
| 江苏联友电动工具有限公司 | ||
| 富士电机（中国）有限公司 | ||
| 福州福大自动化科技有限公司 | 0591-28482265 | |
| 北京展杰兴业科技有限公司 | 010-58765566 |
产品介绍
FUJI富士 6MBP50VBA-120-50 晶体管
Fuji 6MBP50VBA-120-50, P 626 3 Phase Smart Power Module, 50 A max, 1200 V, PCB Mount
Fuji Electric
IPM (Intelligent Power Module) IGBT, V-Series, Fuji Electric The Fuji Electric V-series Intelligent Power Modules (IPM) come equipped with drive, control and protection IGBT circuits. They are easy to implement in power control applications for AC servos, air conditioning equipment and elevators. Built-in protection functions optimize and increase the lifetime of IPM IGBTs thereby safeguarding high system reliability. The IPMs come equipped with protection against over-current, short circuit, control power voltage drop and over-heating, and include output alarm signals. 6MBP... Without Brake-Chopper7MBP... With Brake-Chopper IGBT Discretes & Modules, Fuji Electric The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. ; Configuration 3 Phase; Maximum Continuous Collector Current 50 A; Maximum Collector Emitter Voltage 1200 V; Channel Type N; Mounting Type PCB Mount; Package Type P 626; Pin Count 24; Switching Speed 20kHz; Maximum Power Dissipation 255 W; Dimensions 87 x 50.2 x 12mm; Height 12mm; Length 87mm; Maximum Operating Temperature +110 °C; Width 50.2mm; Minimum Operating Temperature -20 °C;
IGBT Transistor Modules
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