Infineon FF900R12IE4 晶体管-产品快照
- 品牌:
- Infineon
- 型号:
- FF900R12IE4
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供应商名称 | 电话 | 备注 |
---|---|---|
暂无展示,可咨询在线客服 | 400-811-6961 | 微信咨询,cs11@gchane.com , QQ1429311537 |
产品介绍
Infineon FF900R12IE4 晶体管
Infineon FF900R12IE4, PrimePACK2 Series IGBT Module, 900 A max, 1200 V, Screw Mount
Infineon
IGBT Modules, Infineon The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies. The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives. Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4 IGBT Discretes & Modules, Infineon The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. ; Transistor Configuration Series; Configuration Series; Maximum Continuous Collector Current 900 A; Maximum Collector Emitter Voltage 1200 V; Maximum Gate Emitter Voltage ±20V; Channel Type N; Mounting Type Screw Mount; Package Type PrimePACK2; Pin Count 10; Maximum Power Dissipation 510 kW; Dimensions 172 x 89 x 38mm; Height 38mm; Length 172mm; Maximum Operating Temperature +150 °C; Width 89mm; Minimum Operating Temperature -40 °C;
IGBT Transistor Modules