Semikron赛米控  SKM100GB125DN 晶体管

Semikron赛米控 SKM100GB125DN 晶体管-产品快照

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Semikron
型号:
SKM100GB125DN

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产品介绍

Semikron赛米控 SKM100GB125DN 晶体管

Semikron SKM100GB125DN, SEMITRANS2 Dual Half Bridge IGBT Module, 100 A max, 1200 V, Panel Mount

Semikron

Dual IGBT Modules SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS and SEMITOP packages in different topologies, current and voltage ratings. IGBT Modules, Semikron The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. ; Configuration Dual Half Bridge; Transistor Configuration Series; Maximum Continuous Collector Current 100 A; Maximum Collector Emitter Voltage 1200 V; Maximum Gate Emitter Voltage ±20V; Channel Type N; Mounting Type Panel Mount; Package Type SEMITRANS2; Pin Count 7; Dimensions 94.5 x 34.5 x 30.5mm; Height 30.5mm; Length 94.5mm; Maximum Operating Temperature +150 °C; Minimum Operating Temperature -40 °C; Width 34.5mm;

IGBT Transistor Modules

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