Microchip SST26VF032B-104I/MF 存储器-产品快照
- 品牌:
- Microchip
- 型号:
- SST26VF032B-104I/MF
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供应商名称 | 电话 | 备注 |
---|---|---|
欧时电子元件(上海)有限公司 | ||
上海贸泽电子有限公司 |
产品介绍
Microchip SST26VF032B-104I/MF 存储器
SST26VF032B-104I/MF, SPI Split Gate Flash Memory, 4M x 8 bit 32Mbit, 3ns, 2.7 → 3.6 V, 8-Pin, WDFN
Microchip
SST26VF016B/032B/064B Serial Quad I/O (SQI) SuperFlash® Memory The SST26VF016B/032B/064B family of devices from Microchip are Serial Quad I/O™ (SQI™) interface SuperFlash® memory ICs featuring a six-wire, 4-bit I/O interface that allow for low power, high performance operation in a compact low pin-count package. The use of Microchips SQI™ interface results in performance of up to 104 MHz and enables low-latency execute-in-place (XIP) capability with minimal processor buffer memory. These flash memory chips also support full command-set compatibility to traditional Serial Peripheral Interface (SPI) protocol.Through the use of SuperFlash® technology these devices offer exceptional erase times that compare very favourably to other Flash memory alternatives. Sector and block erase commands are typically completed in 18 ms, full chip erase operation taking a typical 35 ms. FeaturesSerial Interface Architecture – Nibble-Wide Multiplexed I/Os with SPI-like Serial Command Structurex1/x2/x4 Serial Peripheral Interface (SPI) ProtocolHigh Speed Clock Frequency- 104 MHz MaxBurst ModesLow Power Consumption – Active Read 15 mA (Typical at 104 MHz), Standby 15 μA (Typical)Fast Erase Time - Sector/Block Erase: 18 ms (Typical); Chip Erase 35 ms (Typical)Flexible Erase CapabilitySoftware Write Protection Flash Memory, Microchip ; Memory Size 32Mbit; Interface Type SPI; Package Type WDFN; Pin Count 8; Organisation 4M x 8 bit; Mounting Type Surface Mount; Cell Type Split Gate; Minimum Operating Supply Voltage 2.7 V; Maximum Operating Supply Voltage 3.6 V; Block Organisation Symmetrical; Length 6mm; Height 0.75mm; Width 5mm; Dimensions 6 x 5 x 0.75mm; Maximum Operating Temperature +85 °C; Maximum Random Access Time 3ns; Minimum Operating Temperature -40 °C; Number of Words 4M; Number of Bits per Word 8bit;
Flash Memory Chips