IPB042N10N3GATMA1-产品快照
- 品牌:
- IPB042N10N3GATMA1
- 型号:
- IPB042N10N3GATMA1
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产品介绍
IPB042N10N3GATMA1
Infineon Technologies - IPB042N10N3GATMA1 - Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 (MOQ = 1000)
IPB042N10N3GATMA1
This item requires a minimum order quantity of 1000. It must be purchased in multiples of 1000. See other products in some related categories (click to browse): Industrial & Scientific > Electronic Components > Semiconductor Products > Transistors Package: 3TO-263 Channel Mode: Enhancement Maximum Drain Source Voltage: 100 V Maximum Continuous Drain Current: 100 A RDS-on: 4.2@10V mOhm Maximum Gate Source Voltage: 20 V Typical Turn-On Delay Time: 27 ns Typical Rise Time: 59 ns Typical Turn-Off Delay Time: 48 ns Typical Fall Time: 14 ns Operating Temperature: -55 to 175 C Mounting: Surface Mount Category: MOSFET Manufacturer: Infineon Technologies